DocumentCode :
399848
Title :
Polarization anisotropy in strained quantum-wire structures considering the strain relaxation effect
Author :
Maruyama, Takeo ; Haque, Anisul ; Arai, Shigehisa
Author_Institution :
Res. Center for Quantum Effect Electron., Tokyo Inst. of Technol., Japan
Volume :
1
fYear :
2003
fDate :
27-28 Oct. 2003
Firstpage :
43
Abstract :
Polarization dependences of spontaneous emission spectrum of strained quantum wires (Q-wire) are studied theoretically considering the effects of strain relaxation in vertically stacked multiple wires. An anomalous dependence of polarization anisotropy on compressive strain in active regions, barrier tensile strain, wire width and the number of vertically stacked layers is predicted which may be explained in terms of band mixing due to strain relaxation.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor device models; semiconductor lasers; semiconductor quantum wires; spontaneous emission; GaInAsP-InP; band mixing; barrier tensile strain; compressive strain; polarization anisotropy; spontaneous emission spectrum; strain relaxation effect; strained quantum-wire structures; vertically stacked multiple wires; Anisotropic magnetoresistance; Buildings; Capacitive sensors; Indium phosphide; Optical polarization; Semiconductor diodes; Semiconductor lasers; Spontaneous emission; Tellurium; Wire;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
ISSN :
1092-8081
Print_ISBN :
0-7803-7888-1
Type :
conf
DOI :
10.1109/LEOS.2003.1251591
Filename :
1251591
Link To Document :
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