DocumentCode
399876
Title
Gain and carrier distribution in InGaAs quantum dot lasers
Author
Smowton, P.M.
Author_Institution
Sch. of Phys. & Astron., Cardiff Univ., UK
Volume
1
fYear
2003
fDate
27-28 Oct. 2003
Abstract
I evaluate the factors that cause gain saturation-number of dot states, proximity of wetting layer and a non-thermal carrier distribution-using measurements of gain and carrier distribution in InGaAs quantum dot laser structures.
Keywords
III-V semiconductors; carrier density; gallium arsenide; indium compounds; quantum dot lasers; semiconductor quantum dots; InGaAs; carrier distribution; dot states; gain distribution; gain saturation-number; quantum dot lasers; wetting layer proximity; Astronomy; Extraterrestrial measurements; Gain measurement; Indium gallium arsenide; Physics; Quantum dot lasers; Quantum well lasers; Temperature dependence; Threshold current; US Department of Transportation;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
ISSN
1092-8081
Print_ISBN
0-7803-7888-1
Type
conf
DOI
10.1109/LEOS.2003.1251627
Filename
1251627
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