Title :
A comparison of the overall radiative efficiency of DWELL, standard QD and QW laser structures
Author :
Pearce, E.J. ; Smowton, P.M. ; Summers, Huw D. ; Hopkinson, Mark
Author_Institution :
Dept. of Phys. & Astron., Cardiff Univ., UK
Abstract :
Carrier distributions in DWELL (quantum dot within a quantum well) and standard quantum dot (QD) lasers are similar but radiative efficiency is higher in DWELLs although both are lower than a quantum well (QW) device even though the QD lasers have lower threshold current densities.
Keywords :
III-V semiconductors; aluminium compounds; carrier density; gallium arsenide; indium compounds; quantum dot lasers; quantum well lasers; DWELL; InGaAs-GaAs-Al0.15Ga0.85As; QD laser structures; QW laser structures; carrier distributions; quantum dot lasers; quantum well device; radiative efficiency; threshold current densities; Current density; Gain measurement; Gallium arsenide; Optical design; Quantum dot lasers; Quantum well lasers; Radiative recombination; Spontaneous emission; Temperature distribution; Threshold current;
Conference_Titel :
Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
Print_ISBN :
0-7803-7888-1
DOI :
10.1109/LEOS.2003.1251630
