DocumentCode
399880
Title
Room temperature lasing with low threshold current of InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition
Author
Tatebayashi, J. ; Hatori, N. ; Ebe, H. ; Sudou, H. ; Kuramata, A. ; Sugawara, M. ; Arakawa, Y.
Author_Institution
RCAST, Tokyo, Japan
Volume
1
fYear
2003
fDate
27-28 Oct. 2003
Firstpage
122
Abstract
This study demonstrates lasing action with very low threshold current (6.7 mA) of InAs/GaAs quantum dots at the wavelength of 1.18 μm grown by metalorganic chemical vapor deposition (MOCVD).
Keywords
III-V semiconductors; MOCVD; indium compounds; quantum dot lasers; semiconductor growth; semiconductor quantum dots; 1.18 mum; 20 degC; 6.7 mA; GaAs; InAs-GaAs; low threshold current; metalorganic chemical vapor deposition; quantum dots; room temperature lasing; Chemical lasers; Chemical vapor deposition; Fiber lasers; Gallium arsenide; Indium gallium arsenide; Quantum dot lasers; Quantum dots; Temperature; Threshold current; US Department of Transportation;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
ISSN
1092-8081
Print_ISBN
0-7803-7888-1
Type
conf
DOI
10.1109/LEOS.2003.1251631
Filename
1251631
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