Gain characteristics of Er-doped ZSG waveguide optical amplifiers

Author

Banerjee, S. ; Baker, C.C. ; Klotzkin, D. ; Steckl, A.J. ; Nyieh, E.E. ; Hommerich, H.

Author_Institution

Cincinnati Univ., OH, USA

Volume

1

fYear

2003

fDate

27-28 Oct. 2003

Firstpage

136

Abstract

This paper studies the spectral characteristics of a ZSG (Zn₂Si_0.5Ge_0.5O₄) host doped with approximately 0.5 at.% Er and the absorption and emission cross-sections at 1.5 μm determined using the Ladenburg-Fuchtbauer relationship. The population statistics of the Er atoms are estimated from a rate equation model and a measured spontaneous emission power vs. pump power curve, and the calculated absorption and emission cross sections and populations are used to calculate the gain of waveguide amplifiers. The calculated gain is in good agreement with the measured gain, confirming the potential of ZSG for integrated waveguide amplifiers and enabling quantitative waveguide amplifier design for other geometries or Er densities.

Keywords

erbium; infrared spectra; integrated optics; optical pumping; silicon compounds; solid lasers; spontaneous emission; waveguide lasers; zinc compounds; 1.5 mum; Zn₂Si_0.5Ge_0.5O₄:Er; absorption cross-sections; emission cross-sections; integrated waveguide amplifiers; population statistics; pump power curve; rate equation model; spontaneous emission power; waveguide amplifier design; waveguide amplifier gain; waveguide optical amplifiers; Absorption; Atomic measurements; Erbium; Optical amplifiers; Optical pumping; Optical waveguides; Semiconductor optical amplifiers; Statistics; Stimulated emission; Zinc;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE

ISSN

1092-8081

Print_ISBN

0-7803-7888-1

Type

conf

DOI

10.1109/LEOS.2003.1251638

Filename

1251638