DocumentCode
399950
Title
Gain and internal losses in GaSb-based 2 μm quantum-well diode-lasers
Author
Rattunde, M. ; Schmitz, J. ; Kiefer, R. ; Wagner, J.
Author_Institution
Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiberg, Germany
Volume
1
fYear
2003
fDate
27-28 Oct. 2003
Firstpage
278
Abstract
This study identifies the gain and dominant loss mechanisms in GaSb-based quantum-well diode lasers. Experimental results are presented and analyzed for a series of GaSb-based diode lasers all emitting at 2.0 μm at 300 K.
Keywords
III-V semiconductors; gallium compounds; optical losses; quantum well lasers; 2 mum; 300 K; GaSb; GaSb-based diode lasers; internal losses; optical gain; quantum-well diode-lasers; Absorption; Current density; Diode lasers; Gas lasers; Laser stability; Optical materials; Optical resonators; Power generation; Power lasers; Quantum wells;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
ISSN
1092-8081
Print_ISBN
0-7803-7888-1
Type
conf
DOI
10.1109/LEOS.2003.1251745
Filename
1251745
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