DocumentCode
400297
Title
A novel trench gate LDMOS
Author
Wilson, P.H.
Author_Institution
Fairchild Semicond., Discrete Power Technol. Group, San Jose, CA, USA
Volume
2
fYear
2003
fDate
28 Sept.-2 Oct. 2003
Abstract
In this paper a novel trench gate lateral double diffused MOSFET (TG-LDMOS) device will be discussed and compared to the conventional LDMOS structure. Currently, the LDMOS devices are the preferred technology for base station amplifiers and in Power MOSFET switching applications. The Synopsys TCAD simulation results will shows an improvement in the breakdown capability, capacitance and gate charge reduction, and improved transfer curve characteristics as compared with a conventional LDMOS structure.
Keywords
power MOSFET; semiconductor device breakdown; semiconductor device testing; technology CAD (electronics); Synopsys TCAD simulation; base station amplifiers; breakdown capability; capacitance; gate charge reduction; improved transfer curve characteristics; power MOSFET switching applications; trench gate LDMOS; trench gate lateral double diffused MOSFET; Base stations; Breakdown voltage; Electric breakdown; MOSFET circuits; Medical simulation; Parasitic capacitance; Power MOSFET; Power amplifiers; Radio frequency; Radiofrequency amplifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 2003. CAS 2003. International
Print_ISBN
0-7803-7821-0
Type
conf
DOI
10.1109/SMICND.2003.1252434
Filename
1252434
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