Title :
Theoretical study of breakdown probabilities in single photon avalanche diodes
Author :
Ng, J.S. ; Tan, C.H. ; David, J.P.R. ; Rees, G.J.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Sheffield, UK
Abstract :
In this paper we have used a simple, hard dead space impact ionization model to describe the breakdown probabilities in single photon avalanche diodes.
Keywords :
avalanche breakdown; avalanche photodiodes; impact ionisation; photodetectors; semiconductor device breakdown; breakdown probabilities; hard dead space impact ionization model; single photon avalanche diodes; Avalanche breakdown; Avalanche photodiodes; Breakdown voltage; Charge carrier processes; Electric breakdown; Electrons; Impact ionization; Optical detectors; Optical noise; Semiconductor diodes;
Conference_Titel :
Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
Print_ISBN :
0-7803-7888-1
DOI :
10.1109/LEOS.2003.1253028
