DocumentCode
400381
Title
Wide operating temperature range of passively mode locked InGaAs/InGaAsP 1.55 μm quantum well lasers
Author
Tan, W.K. ; Wong, H.Y. ; Lee, H.K. ; Bryce, A.C. ; Marsh, J.H.
Author_Institution
Dept. of Electr. & Electron. Eng., Glasgow Univ., UK
Volume
2
fYear
2003
fDate
27-28 Oct. 2003
Firstpage
824
Abstract
We report an investigation of the mode locked operation of mode locked laser diodes above room temperature. Stable mode locking without any trace of self-pulsation is observed at temperatures up to 65°C.
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser mode locking; quantum well lasers; radiofrequency spectra; 1.55 micron; 293 to 298 K; 65 C; InGaAs-InGaAsP; InGaAs-InGaAsP quantum well lasers; mode locked laser diodes; passive mode locking; self-pulsation; Diode lasers; Indium gallium arsenide; Laser mode locking; Optical materials; Optical pulses; Quantum well lasers; Radio frequency; Space vector pulse width modulation; Temperature distribution; Ultrafast optics;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
ISSN
1092-8081
Print_ISBN
0-7803-7888-1
Type
conf
DOI
10.1109/LEOS.2003.1253054
Filename
1253054
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