DocumentCode
400400
Title
Characteristics of long wavelength quantum dots lasers
Author
Kim, Seongsin M. ; Harris, James S.
Author_Institution
Center for Integrated Syst., Stanford Univ., CA, USA
Volume
2
fYear
2003
fDate
27-28 Oct. 2003
Firstpage
945
Abstract
In this paper characteristics of long wavelength quantum dots lasers is discussed. Small signal modulation response was measured at room temperature under CW biasing condition with a network analyzer (HP8510), a high speed InGaAs photodetector, and a low-noise amplifier.
Keywords
III-V semiconductors; amplifiers; frequency measurement; gallium arsenide; indium compounds; laser variables measurement; network analysers; optical modulation; photodetectors; quantum dot lasers; semiconductor quantum dots; 293 to 298 K; CW biasing condition; HP8510; InGaAs; long wavelength quantum dots lasers characteristics; low-noise amplifier; network analyzer; photodetector; room temperature; small signal modulation response measurement; Bandwidth; Chemical lasers; Fiber lasers; Indium gallium arsenide; Laser applications; Quantum dot lasers; Semiconductor lasers; Temperature; Threshold current; US Department of Transportation;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
ISSN
1092-8081
Print_ISBN
0-7803-7888-1
Type
conf
DOI
10.1109/LEOS.2003.1253117
Filename
1253117
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