Title :
Characteristics of long wavelength quantum dots lasers
Author :
Kim, Seongsin M. ; Harris, James S.
Author_Institution :
Center for Integrated Syst., Stanford Univ., CA, USA
Abstract :
In this paper characteristics of long wavelength quantum dots lasers is discussed. Small signal modulation response was measured at room temperature under CW biasing condition with a network analyzer (HP8510), a high speed InGaAs photodetector, and a low-noise amplifier.
Keywords :
III-V semiconductors; amplifiers; frequency measurement; gallium arsenide; indium compounds; laser variables measurement; network analysers; optical modulation; photodetectors; quantum dot lasers; semiconductor quantum dots; 293 to 298 K; CW biasing condition; HP8510; InGaAs; long wavelength quantum dots lasers characteristics; low-noise amplifier; network analyzer; photodetector; room temperature; small signal modulation response measurement; Bandwidth; Chemical lasers; Fiber lasers; Indium gallium arsenide; Laser applications; Quantum dot lasers; Semiconductor lasers; Temperature; Threshold current; US Department of Transportation;
Conference_Titel :
Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
Print_ISBN :
0-7803-7888-1
DOI :
10.1109/LEOS.2003.1253117
