DocumentCode
400405
Title
Mg-doped AlGaInP laser diodes with high characteristic temperature
Author
Onishi, Toshikazn ; Inoue, Kenichi ; Takayama, Toru ; Yuri, Masaaki ; Onozawa, Kazntoshi ; Ueda, Daisnke
Author_Institution
Semicond. Co., Matsushita Electr. Ind. Co. Ltd., Kyoto, Japan
Volume
2
fYear
2003
fDate
27-28 Oct. 2003
Firstpage
979
Abstract
In this paper, we demonstrate Mg-doped AlGalnP LDs with high characteristic temperature. We found that abrupt Mg profiles can be obtained in quaternary alloys like AlGalnP, although significant memory effects are observed in GaAs. Based on this effect, we fabricated AlGalnP LDs with a highly Mg-doped cladding layer. As a result, reliable 650-nm-band LDs with characteristic temperature over 133 K are achieved.
Keywords
III-V semiconductors; aluminium compounds; claddings; gallium arsenide; indium compounds; magnesium; optical fabrication; semiconductor lasers; thermo-optical effects; 133 K; 650 nm; AlGaInP:Mg; GaAs; Mg-doped AlGaInP laser diode; cladding layer; memory effect; optical fabrication; quaternary alloy; temperature characteristics; Cities and towns; Diode lasers; Doping; Electrons; Gallium arsenide; Magnesium; Mass spectroscopy; Semiconductor devices; Temperature; Zinc;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
ISSN
1092-8081
Print_ISBN
0-7803-7888-1
Type
conf
DOI
10.1109/LEOS.2003.1253134
Filename
1253134
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