2.2 ps electrical pulse generated from 1.55 μm optically-triggered ion-irradiated photoconductive switch

Author

Jouland, L. ; Mangeney, J. ; Lourtioz, J.-M. ; Crozat, P.

Author_Institution

Inst. d´´Electronique Fondamentale, Univ. de Paris-Sud, Orsay, France

Volume

2

fYear

2003

fDate

27-28 Oct. 2003

Firstpage

993

Abstract

In this paper we have investigated that the ionic irradiation of InGaAs layers provide sub-picosecond carrier lifetime while preserving good electrical properties of the material. Photoconductor based on ion-irradiated InGaAs exhibits a 2.2ps electrical pulse with an amplitude of 0.65 Volts for 3 Volts polarization. So such photoconductive switches are good candidates to test high bandwidth telecom devices.

Keywords

III-V semiconductors; carrier lifetime; high-speed optical techniques; indium compounds; light polarisation; optical communication; optical switches; photoconductivity; 1.55 micron; 2.2 ps; InGaAs; electrical properties; electrical pulse; electrical pulse generation; high bandwidth telecom device; ion-irradiated InGaAs layer; optically-triggered photoconductive switch; polarization; sub-picosecond carrier lifetime; Charge carrier lifetime; Indium gallium arsenide; Optical materials; Optical polarization; Optical pulse generation; Optical pulses; Optical switches; Photoconducting devices; Photoconducting materials; Photoconductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE

ISSN

1092-8081

Print_ISBN

0-7803-7888-1

Type

conf

DOI

10.1109/LEOS.2003.1253141

Filename

1253141