Title :
Integration and optimisation of a high performance RF lateral DMOS in an advanced BiCMOS technology
Author :
Szelag, B. ; Baudry, H. ; Muller, D. ; Giry, A. ; Lenoble, D. ; Reynard, B. ; Pache, D. ; Monroy, A.
Author_Institution :
STMicroelectronics, Crolles, France
Abstract :
In this paper, we present the optimisation of a RF lateral DMOS and its integration in an advanced 0.25 /spl mu/m SiGe:C BiCMOS technology. The proposed device shows excellent characteristics; Ron is around 2.5 /spl Omega/.mm with a BVDS larger than 13 V, f/sub T/ and F/sub max/ reach 21 GHz and 40 GHz respectively. These performances fit wireless RF-power amplifier needs. Integration of such a device in a RF oriented BiCMOS process is a key issue for a SOC approach of wireless circuits.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; MIMIC; MMIC power amplifiers; carbon; circuit optimisation; isolation technology; millimetre wave power amplifiers; power MOSFET; semiconductor device breakdown; 21 GHz; 40 GHz; RE Lateral DMOS; SOC approach; SiGe:C; advanced BiCMOS Technology; breakdown voltage; deep trenches; electrical parameters; high performance; lateral isolation; leakage current; optimisation; wireless RF-power amplifier; BiCMOS integrated circuits; CMOS technology; Epitaxial growth; Heterojunction bipolar transistors; Isolation technology; MIM capacitors; Metal-insulator structures; Radio frequency; Radiofrequency amplifiers; Substrates;
Conference_Titel :
European Solid-State Device Research, 2003. ESSDERC '03. 33rd Conference on
Conference_Location :
Estoril, Portugal
Print_ISBN :
0-7803-7999-3
DOI :
10.1109/ESSDERC.2003.1256805
