DocumentCode
400833
Title
Comparison of plasma doping and beamline technologies for low energy ion implantation
Author
Renau, A. ; Scheuer, J.T.
fYear
2002
fDate
27-27 Sept. 2002
Firstpage
151
Lastpage
156
Abstract
The trend towards shallower junctions especially in high dose applications, for example source drain extensions, results in significant challenges for ion implantation. Satisfying increasingly stringent device performance requirements, such as energy purity, dose uniformity and implant angle control, runs counter to maintaining adequate productivity with beamline systems. The limitations of beamline implant are discussed and compared with the capabilities of plasma doping technologies to address these requirements. Recent changes in the trend towards commercialization of plasma doping are summarized.
Keywords
ion implantation; plasma materials processing; semiconductor doping; beamline technologies; dose uniformity; energy purity; implant angle control; low energy ion implantation; plasma doping; shallower junctions; source drain extensions; Control systems; Counting circuits; Doping; Implants; Ion implantation; Plasma applications; Plasma devices; Plasma immersion ion implantation; Plasma sources; Productivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on
Conference_Location
Taos, New Mexico, USA
Print_ISBN
0-7803-7155-0
Type
conf
DOI
10.1109/IIT.2002.1257961
Filename
1257961
Link To Document