Integrated implant-RTP process monitor using solid phase epitaxy activation

A low-cost, integrated ion implant-rapid thermal processor (RTP), SPC monitor has been developed to provide quick feedback for implant and RTP conditions critical to SPAWAR Systems Center, San Diego´s (SSC San Diego) radiation hardened technologies. Low temperature solid phase epitaxy (SPE) was leveraged to achieve stable, reproducible responses at activation temperatures considerably below those used in conventional furnaces. Instabilities inherent to SPE processing required the design of experiment approach to determine implant and RTP conditions close to those used in SSC San Diego´s baseline SOI technology, yet insensitive to room temperature drift (SPE-relaxation). A response methodology has been created to first isolate the cause of out-of-control signals to either the implanter or RTP system. Then, regression analyses on the response surface was used to quantify the drift in either dosimetry or temperature control.