Arsenic shallow implant characterization by magnetic sector and time of flight SIMS instruments

Author

Bersani, M. ; Lazzeri, P. ; Giubertoni, D. ; Barozzi, Mario ; Marchi, E.B. ; Anderle, Milan

fYear

2002

fDate

27-27 Sept. 2002

Firstpage

268

Lastpage

271

Abstract

The progressive microelectronics downscaling requires ultra-shallow junctions (USJ) in order to produce future devices. Dynamic-SIMS (D-SIMS) has been widely used to analyse dopant implants, but at the present the USJ characterisation is one of the major challenges for SIMS (secondary ion mass spectrometry) depth profiling. In this work, SIMS depth profiles have been carried out on arsenic implants at different energies in order to evaluate the most suitable analytical conditions. Analyses have been performed using both magnetic sector and time-of-flight mass spectrometer instruments.

Keywords

arsenic; doping profiles; ion implantation; secondary ion mass spectroscopy; time of flight mass spectroscopy; As; D-SIMS depth profiling; USJ; arsenic shallow implant characterization; depth profiles; dopant implants; dynamic-SIMS; implant energy; ion implantation energy; magnetic sector instruments; secondary ion mass spectrometry; time of flight SIMS instruments; ultra shallow junctions; ultra-shallow junctions; Annealing; Instruments; MOS devices; MOSFETs; Magnetic analysis; Magnetic devices; Mass spectroscopy; Microelectronic implants; Performance analysis; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on

Conference_Location

Taos, New Mexico, USA

Print_ISBN

0-7803-7155-0

Type

conf

DOI

10.1109/IIT.2002.1257990

Filename

1257990