Title :
Investigation of lanthanum contamination from a lanthanated tungsten ion source
Author :
Haublein, V. ; Frey, Lothar ; Ryssel, H. ; Walser, H.
Abstract :
Tungsten is a material with distinctive advantages when used for ion sources, such as chemical resistance against common source feed gases or the very high melting point. In comparison to molybdenum, tungsten shows less sputter erosion and no obvious mass interference when BF2+ is implanted. However, the machinability of pure tungsten is very poor. WL 10 is an alloy of tungsten and 1% La2O3 that combines the advantages of pure tungsten with a significantly increased machinability. In this paper, the contamination potential of lanthanum for B+, BF2+, P+, and As+ implants, respectively, was studied by means of simulations and experiments.
Keywords :
arsenic; boron; contamination; ion implantation; ion sources; lanthanum; lanthanum compounds; machinability; phosphorus; semiconductor process modelling; tungsten alloys; As; B; BF2; P; W:La2O3; WL 10 alloy; feed gas chemical resistance; ion implantation; lanthanated tungsten ion source; lanthanum contamination potential; sputter erosion; tungsten machinability; Chemicals; Contamination; Feeds; Gases; Interference; Ion sources; Lanthanum; Magnetic analysis; Magnetic separation; Tungsten;
Conference_Titel :
Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on
Conference_Location :
Taos, New Mexico, USA
Print_ISBN :
0-7803-7155-0
DOI :
10.1109/IIT.2002.1258011