DocumentCode
400879
Title
Investigation of lanthanum contamination from a lanthanated tungsten ion source
Author
Haublein, V. ; Frey, Lothar ; Ryssel, H. ; Walser, H.
fYear
2002
fDate
27-27 Sept. 2002
Firstpage
346
Lastpage
349
Abstract
Tungsten is a material with distinctive advantages when used for ion sources, such as chemical resistance against common source feed gases or the very high melting point. In comparison to molybdenum, tungsten shows less sputter erosion and no obvious mass interference when BF2+ is implanted. However, the machinability of pure tungsten is very poor. WL 10 is an alloy of tungsten and 1% La2O3 that combines the advantages of pure tungsten with a significantly increased machinability. In this paper, the contamination potential of lanthanum for B+, BF2+, P+, and As+ implants, respectively, was studied by means of simulations and experiments.
Keywords
arsenic; boron; contamination; ion implantation; ion sources; lanthanum; lanthanum compounds; machinability; phosphorus; semiconductor process modelling; tungsten alloys; As; B; BF2; P; W:La2O3; WL 10 alloy; feed gas chemical resistance; ion implantation; lanthanated tungsten ion source; lanthanum contamination potential; sputter erosion; tungsten machinability; Chemicals; Contamination; Feeds; Gases; Interference; Ion sources; Lanthanum; Magnetic analysis; Magnetic separation; Tungsten;
fLanguage
English
Publisher
ieee
Conference_Titel
Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on
Conference_Location
Taos, New Mexico, USA
Print_ISBN
0-7803-7155-0
Type
conf
DOI
10.1109/IIT.2002.1258011
Filename
1258011
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