Monitoring of ion implanters using multiple dopants

Author

Pong, R. ; Schuur, J. ; Weisenberger, W. ; Johnson, R.

fYear

2002

fDate

27-27 Sept. 2002

Firstpage

353

Lastpage

355

Abstract

A methodology for the monitoring and charting of the monitor results using multiple species on a single chart is demonstrated. The technique utilizes the concept of sensitivity in the correlation of the different species and the associated uniformities. The methodology permits the charting of the data in Equivalent Dose values or in Equivalent Boron Sheet Resistance values. Sheet resistance and sensitivity data for boron, arsenic, and phosphorus is presented from 1e14 to 1e16. Sensitivity is demonstrated to be the slope of the Sheet Resistance/Dose curve on a log log graph.

Keywords

arsenic; boron; control charts; curve fitting; ion implantation; phosphorus; process monitoring; regression analysis; sensitivity analysis; statistical process control; curve fining; equivalent boron sheet resistance values; equivalent dose values; impurity scattering; ion implanters monitoring; lattice scattering; log log graph; multiple dopants; multiple species; process control; regression analysis; saturation limits; sensitivity; single chart; third order polynomial; Atomic measurements; Boron; Condition monitoring; Electric resistance; Electric variables measurement; Electrical resistance measurement; Implants; Process control; Regression analysis; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on

Conference_Location

Taos, New Mexico, USA

Print_ISBN

0-7803-7155-0

Type

conf

DOI

10.1109/IIT.2002.1258013

Filename

1258013