Author :
Fujisawa, Hiroyuki ; Matsumoto, Tad ; Nakaya, M. ; Yamashita, Takayoshi ; Miyamoto, Naoyuki ; Miyabayashi, K. ; Kobayashi, Takehiko ; Yamamoto, Yusaku ; Nakamura, Mitsutoshi ; Nagayama, Tsutomu ; Kinoyama, T. ; Iwasawa, K. ; Nagai, N. ; Naito, Masakazu ;
Abstract :
New dopant species, such as indium and antimony, are needed for the modem semiconductor manufacturing processes. We have developed a new ion implanter capable of implanting single charge In and Sb up to 200keV, which enhances the versatility of modern doping process like halo and pocket implantation. This versatile ion implanter EXCEED2300V has new beam line components with field proven technologies inherited from EXCEED2300H which ensure the precise implant such as no energy contaminant implantation, precise parallel beam implantation. In this paper, the detailed machine performance is reviewed.
Keywords :
ion implantation; semiconductor doping; 200 keV; halo implantation; pocket implantation; precise parallel beam implantation; versatile medium ion implanter EXCEED2300V; Contamination; Floods; Implants; Indium; Ion beams; Particle beams; Plasma applications; Plasma properties; Solids; Ultra large scale integration;
