Title :
Development of new antimony and indium dopants for ion implantation
Author :
Wang, Zhen ; McMahon, C.N. ; Xu, Changsheng ; Baum, T.H. ; Mayer, Jonas ; Wang, Lingfeng
Abstract :
Three antimony and indium compounds, CH3SbBr2, (SbCl3)·[SbCl3·S(CH3)2] and (hfac)In(CH3)2 were synthesized and characterized by spectroscopic methods. These compounds are highly volatile with excellent thermal stability. CH3SbBr2 contains only one carbon that may minimize carbon incorporation. (SbCl3)·[SbCl3·S(CH3)2] is a new volatile dimeric compound. (hfac)In(CH3)2 is an air and moisture stable compound and is readily sublimed at room temperature. These compounds show promise for use as ion implant dopants.
Keywords :
antimony compounds; indium compounds; ion implantation; organometallic compounds; thermal stability; vaporisation; (SbCl3)·[SbCl3·S(CH3)2]; (hfac)In(CH3)2; CH3SbBr2; antimony dopant; carbon incorporation minimization; highly volatile compounds; indium dopant; ion implant dopants; ion implantation; room temperature sublimation; thermal decomposition; thermal stability; volatile dimeric compound; volatility; Business; Carbon compounds; Cleaning; Implants; Indium compounds; Ion implantation; Moisture; Temperature; Thermal decomposition; Thermal stability;
Conference_Titel :
Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on
Conference_Location :
Taos, New Mexico, USA
Print_ISBN :
0-7803-7155-0
DOI :
10.1109/IIT.2002.1258024
