Title :
Optimisation of large beam mass analysis
Abstract :
A large beam mass analysis system for both the high current implant of wafers over a very wide energy range (100 eV-100 keV) and/or the implant of large substrates (up to 1 metre) is described. The advantages of the sextupole geometry for the prevention of light ion beam reflection and the intrinsic insensitivity of this technique to beam quality are emphasised.
Keywords :
beam handling techniques; focused ion beam technology; ion implantation; mass spectrometer accessories; particle beam diagnostics; semiconductor doping; intrinsic insensitivity; large beam mass analysis optimisation; light ion beam reflection; sextupole geometry; wafers high current implant; Current density; Geometrical optics; Geometry; Implants; Ion beams; Ion sources; Lenses; Magnetic fields; Optical reflection; Region 2;
Conference_Titel :
Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on
Conference_Location :
Taos, New Mexico, USA
Print_ISBN :
0-7803-7155-0
DOI :
10.1109/IIT.2002.1258037
