DocumentCode :
400908
Title :
Elemental analysis of residual deposits in an ion implanter using IBA techniques
Author :
Mefo, J. ; Kirkby, K.J. ; Sealy, B.J. ; Boudreault, G. ; Jeynes, C. ; Collart, E.J.H.
fYear :
2002
fDate :
27-27 Sept. 2002
Firstpage :
467
Lastpage :
470
Abstract :
Fluorinated species are now widely used as source gases in advanced ion implantation systems because of their controllability and relative ease of operation. The extreme reactivity of fluorine can have a deleterious effect on the source and extraction region, leading to the formation of deposits, which in turn can either directly or indirectly compromise the performance of the source. Little is known, however, about the composition of these deposits and the mechanisms by which they are formed. It is for this reason that this study was undertaken. Similar effects are not observed for hydrogenated species such as arsine and phosphine. In this work, BF3 was used as the source gas. The behaviour of the source was monitored, during 25 hours of operation. The deposits resulting from extracting an ion beam were studied using a range of ion beam analysis techniques in conjunction with Scanning Electron Microscopy. It was found that the deposits have a matrix of carbon and the two sides of the deposits show different elemental profiles (W, As, Fe, In, Sb, As), reflecting both the history of the ion implanter and the way in which the deposits were formed.
Keywords :
Rutherford backscattering; X-ray chemical analysis; ion implantation; nuclear chemical analysis; scanning electron microscopy; semiconductor doping; BF3; IBA techniques; SEM; controllability; elemental analysis; extraction region; extreme reactivity; fluorinated species; ion beam analysis techniques; ion implanter; relative ease of operation; residual deposits; source gases; source region; Carbon; Chemical elements; Controllability; Electron beams; Gases; Ion beams; Ion implantation; Iron; Monitoring; Scanning electron microscopy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on
Conference_Location :
Taos, New Mexico, USA
Print_ISBN :
0-7803-7155-0
Type :
conf
DOI :
10.1109/IIT.2002.1258042
Filename :
1258042
Link To Document :
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