New implantation tables for B, BF2, P, As, In and Sb

After implantation, the distribution of ions can be described by analytical functions with parameters depending on implantation conditions. In this work, a calibrated Monte Carlo simulator was used to calculate tables for the implantation of B, BF₂, P, As, In and Sb. Starting from systematic Monte Carlo data we extracted the parameters of two Pearson functions for dopant profiles in crystalline silicon and single Pearson functions for profiles in SiO₂, Si₃N₄ and poly-silicon. The new tables cover more dopant species and implantation conditions than existing implantation tables and provide excellent agreement with 90 SIMS profiles. In a 2D nMOS test case, the implantation simulation with the new tables provides the same accuracy as Monte Carlo simulations.