• DocumentCode
    400942
  • Title

    SIMOX wafer fabrication by 100mA O+ implantation using the UI-6000 implanter

  • Author

    Tokiguchi, K. ; Seki, Hiroshi ; Seki, Takaya ; Itou, Junko ; Higuchi, Yuji ; Mera, Kazuya ; Tanaka, Shoji ; Yamashita, Yukihiko ; Hashimoto, I. ; Yoshikawa, Akira

  • fYear
    2002
  • fDate
    27-27 Sept. 2002
  • Firstpage
    629
  • Lastpage
    632
  • Abstract
    Implant characteristics of SIMOX implanter UI-6000 were investigated under the condition of a 100mA-class O+ beam current. Operation data of the UI-6000 showed that the mass-analyzed 100mA O+ implantation can be effectively applied to high quality SIMOX-SOI wafer fabrication.
  • Keywords
    SIMOX; annealing; buried layers; elemental semiconductors; ion implantation; oxygen; silicon; surface contamination; 100 mA; BOX layer uniformities; O+ implantation; SIMOX wafer fabrication; Si:O; UI-6000 implanter; advanced implanter; heavy metal contamination; high quality wafer fabrication; implant dose uniformity; mass-analyzed implantation; next generation CMOS fabrication; particle contamination density; Annealing; CMOS technology; Contamination; Fabrication; Implants; Particle beams; Research and development; Shape measurement; Silicon on insulator technology; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on
  • Conference_Location
    Taos, New Mexico, USA
  • Print_ISBN
    0-7803-7155-0
  • Type

    conf

  • DOI
    10.1109/IIT.2002.1258084
  • Filename
    1258084
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=400942