Title :
SIMOX wafer fabrication by 100mA O+ implantation using the UI-6000 implanter
Author :
Tokiguchi, K. ; Seki, Hiroshi ; Seki, Takaya ; Itou, Junko ; Higuchi, Yuji ; Mera, Kazuya ; Tanaka, Shoji ; Yamashita, Yukihiko ; Hashimoto, I. ; Yoshikawa, Akira
Abstract :
Implant characteristics of SIMOX implanter UI-6000 were investigated under the condition of a 100mA-class O+ beam current. Operation data of the UI-6000 showed that the mass-analyzed 100mA O+ implantation can be effectively applied to high quality SIMOX-SOI wafer fabrication.
Keywords :
SIMOX; annealing; buried layers; elemental semiconductors; ion implantation; oxygen; silicon; surface contamination; 100 mA; BOX layer uniformities; O+ implantation; SIMOX wafer fabrication; Si:O; UI-6000 implanter; advanced implanter; heavy metal contamination; high quality wafer fabrication; implant dose uniformity; mass-analyzed implantation; next generation CMOS fabrication; particle contamination density; Annealing; CMOS technology; Contamination; Fabrication; Implants; Particle beams; Research and development; Shape measurement; Silicon on insulator technology; Temperature;
Conference_Titel :
Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on
Conference_Location :
Taos, New Mexico, USA
Print_ISBN :
0-7803-7155-0
DOI :
10.1109/IIT.2002.1258084
