Crystal fracture induced by decorating of postimplantation defects: Silicon layer delamination

Author

Usenko, A. ; Carr, W. ; Bo Chen

fYear

2002

fDate

27-27 Sept. 2002

Firstpage

641

Lastpage

644

Abstract

We observe hydrogen platelets buildup into single crystalline silicon caused by hydrogen plasma processing. The platelets are aligned along a layer of lattice defects formed in silicon before the plasma processing. The buried defect layer is formed by either silicon-into-silicon or argon-into-silicon implantation. We discuss the platelet nucleation, growth, and merge phenomena, and discuss applicability of the plasma hydrogenation to silicon-on-insulator wafer process of layer transfer type.

Keywords

buried layers; elemental semiconductors; hydrogenation; ion implantation; nucleation; plasma materials processing; semiconductor doping; silicon; silicon-on-insulator; H platelets; Si layer delamination; Si:H; buried defect layer; crystal fracture; lattice defects; plasma processing; platelet nucleation; postimplantation defects decorating; silicon-on-insulator wafer process; Costs; Crystallization; Delamination; Etching; Hydrogen; Implants; Plasma applications; Plasma materials processing; Semiconductor films; Silicon on insulator technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on

Conference_Location

Taos, New Mexico, USA

Print_ISBN

0-7803-7155-0

Type

conf

DOI

10.1109/IIT.2002.1258087

Filename

1258087