Title :
Crystal fracture induced by decorating of postimplantation defects: Silicon layer delamination
Author :
Usenko, A. ; Carr, W. ; Bo Chen
Abstract :
We observe hydrogen platelets buildup into single crystalline silicon caused by hydrogen plasma processing. The platelets are aligned along a layer of lattice defects formed in silicon before the plasma processing. The buried defect layer is formed by either silicon-into-silicon or argon-into-silicon implantation. We discuss the platelet nucleation, growth, and merge phenomena, and discuss applicability of the plasma hydrogenation to silicon-on-insulator wafer process of layer transfer type.
Keywords :
buried layers; elemental semiconductors; hydrogenation; ion implantation; nucleation; plasma materials processing; semiconductor doping; silicon; silicon-on-insulator; H platelets; Si layer delamination; Si:H; buried defect layer; crystal fracture; lattice defects; plasma processing; platelet nucleation; postimplantation defects decorating; silicon-on-insulator wafer process; Costs; Crystallization; Delamination; Etching; Hydrogen; Implants; Plasma applications; Plasma materials processing; Semiconductor films; Silicon on insulator technology;
Conference_Titel :
Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on
Conference_Location :
Taos, New Mexico, USA
Print_ISBN :
0-7803-7155-0
DOI :
10.1109/IIT.2002.1258087
