Optical properties and applications of heavily Fe implanted InP

Author

Cesca, T. ; Gasparotto, A. ; Fraboni, B. ; Priolo, Francesco ; Moreira, Edmilson C. ; Scamarcio, G.

fYear

2002

fDate

27-27 Sept. 2002

Firstpage

653

Lastpage

656

Abstract

Different Fe implantation schemes in n-doped InP have been used in order to create semi-insulating layers with the desired characteristics. The electrical properties of these structures have been investigated by means of current-voltage measurements and deep level analyses; compensation of n-doping up to 10¹⁹ cm^-3 has been verified. Electroluminescence emission has also been obtained from the compensated samples with the highest substrate doping concentration up to the temperature of 260 K.

Keywords

III-V semiconductors; electroluminescence; heavily doped semiconductors; indium compounds; ion implantation; iron; semiconductor doping; 260 K; InP:Fe; current-voltage measurements; deep level analyses; electrical properties; electroluminescence emission; heavily Fe implanted InP; optical properties; substrate doping concentration; Current measurement; Doping; Electric variables measurement; Electroluminescence; Extraterrestrial measurements; Implants; Indium phosphide; Iron; Optical sensors; Physics;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on

Conference_Location

Taos, New Mexico, USA

Print_ISBN

0-7803-7155-0

Type

conf

DOI

10.1109/IIT.2002.1258090

Filename

1258090