Evolution of the local Fe environment in high temperature implanted InP

High temperature ion implantation of Fe in InP has been investigated to understand how the final lattice position of iron atoms is influenced by the implantation and annealing conditions. A high degree of substitutionality is obtained thanks to dynamical annealing, during implantation, of the damage. It is found that point defect fluxes during high temperature annealing control the kick-out of Fe from substitutional sites, leading to the formation of Fe-P complexes. However, the electrically active Fe fraction is still in the 10¹⁸ cm^-3 range, and full compensation of initially n+ doped materials can be obtained.