DocumentCode
400950
Title
Cluster ion beam processing - METI/NEDO projects and recent progress $
Author
Yamada, Isao ; Matsuo, Jiro ; Toyoda, Noriaki
fYear
2002
fDate
27-27 Sept. 2002
Firstpage
661
Lastpage
664
Abstract
Since the initial study of gas cluster ion beams (GCIB) was started in the Ion Beam Engineering Experimental Laboratory of Kyoto University, more than 15 years have passed. Some of the results of that study have already been applied for industrial use. Unique characteristics of gas cluster ion bombardment have been found to offer potential for various other industrial applications. The impact of an accelerated cluster ion upon a target surface imparts very high energy densities into the impact area and produces non-linear effects that are not associated with the impacts of atomic ions. Among prospective applications for these effects are included shallow ion implantation, high rate sputtering, surface cleaning and smoothing, and low temperature thin film formation.
Keywords
ion implantation; ion-surface impact; ionised cluster beam deposition; semiconductor doping; METI/NEDO projects; accelerated cluster ion; cluster ion beam processing; gas cluster ion beams; high rate sputtering; impact area; low temperature thin film formation; nonlinear effects; shallow ion implantation; smoothing; surface cleaning; very high energy densities; Acceleration; Atomic layer deposition; Gold; Ion beams; Laboratories; Microscopy; Solids; Sputtering; Surface cleaning; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on
Conference_Location
Taos, New Mexico, USA
Print_ISBN
0-7803-7155-0
Type
conf
DOI
10.1109/IIT.2002.1258092
Filename
1258092
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