• DocumentCode
    400950
  • Title

    Cluster ion beam processing - METI/NEDO projects and recent progress $

  • Author

    Yamada, Isao ; Matsuo, Jiro ; Toyoda, Noriaki

  • fYear
    2002
  • fDate
    27-27 Sept. 2002
  • Firstpage
    661
  • Lastpage
    664
  • Abstract
    Since the initial study of gas cluster ion beams (GCIB) was started in the Ion Beam Engineering Experimental Laboratory of Kyoto University, more than 15 years have passed. Some of the results of that study have already been applied for industrial use. Unique characteristics of gas cluster ion bombardment have been found to offer potential for various other industrial applications. The impact of an accelerated cluster ion upon a target surface imparts very high energy densities into the impact area and produces non-linear effects that are not associated with the impacts of atomic ions. Among prospective applications for these effects are included shallow ion implantation, high rate sputtering, surface cleaning and smoothing, and low temperature thin film formation.
  • Keywords
    ion implantation; ion-surface impact; ionised cluster beam deposition; semiconductor doping; METI/NEDO projects; accelerated cluster ion; cluster ion beam processing; gas cluster ion beams; high rate sputtering; impact area; low temperature thin film formation; nonlinear effects; shallow ion implantation; smoothing; surface cleaning; very high energy densities; Acceleration; Atomic layer deposition; Gold; Ion beams; Laboratories; Microscopy; Solids; Sputtering; Surface cleaning; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on
  • Conference_Location
    Taos, New Mexico, USA
  • Print_ISBN
    0-7803-7155-0
  • Type

    conf

  • DOI
    10.1109/IIT.2002.1258092
  • Filename
    1258092