Diffusion and defect formation in ion implanted Si nanostructures

Author

Hogg, S.M. ; Kluth, P. ; Lenk, S. ; Zhang, M. ; Trellenkamp, Stefan ; Moers, J. ; Mantl, Siegfried

fYear

2002

fDate

27-27 Sept. 2002

Firstpage

682

Lastpage

685

Abstract

Simulations and measurements of ion implantation and diffusion in 20-200 nm Si nanostructures have been carried out. Simulations predict a reduction in transient enhanced diffusion with decreasing nanostructure dimensions and a non-uniform diffusion front. SIMS measurements provide useful information in the near surface region, but for deeper profiling, detailed modeling is required. TEM shows the presence of extended defects in structures as small as 40 nm.

Keywords

diffusion; elemental semiconductors; extended defects; ion implantation; nanostructured materials; secondary ion mass spectra; semiconductor doping; silicon; transmission electron microscopy; 20 to 200 nm; 40 nm; SIMS measurements; Si; TEM; decreasing nanostructure dimensions; defect formation; diffusion; extended defects; ion implanted Si nanostructures; nonuniform diffusion front; transient enhanced diffusion; Annealing; Availability; Doping profiles; Implants; Ion implantation; MOSFETs; Nanostructures; Predictive models; Semiconductor device modeling; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on

Conference_Location

Taos, New Mexico, USA

Print_ISBN

0-7803-7155-0

Type

conf

DOI

10.1109/IIT.2002.1258097

Filename

1258097