Title :
Diffusion and defect formation in ion implanted Si nanostructures
Author :
Hogg, S.M. ; Kluth, P. ; Lenk, S. ; Zhang, M. ; Trellenkamp, Stefan ; Moers, J. ; Mantl, Siegfried
Abstract :
Simulations and measurements of ion implantation and diffusion in 20-200 nm Si nanostructures have been carried out. Simulations predict a reduction in transient enhanced diffusion with decreasing nanostructure dimensions and a non-uniform diffusion front. SIMS measurements provide useful information in the near surface region, but for deeper profiling, detailed modeling is required. TEM shows the presence of extended defects in structures as small as 40 nm.
Keywords :
diffusion; elemental semiconductors; extended defects; ion implantation; nanostructured materials; secondary ion mass spectra; semiconductor doping; silicon; transmission electron microscopy; 20 to 200 nm; 40 nm; SIMS measurements; Si; TEM; decreasing nanostructure dimensions; defect formation; diffusion; extended defects; ion implanted Si nanostructures; nonuniform diffusion front; transient enhanced diffusion; Annealing; Availability; Doping profiles; Implants; Ion implantation; MOSFETs; Nanostructures; Predictive models; Semiconductor device modeling; Transistors;
Conference_Titel :
Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on
Conference_Location :
Taos, New Mexico, USA
Print_ISBN :
0-7803-7155-0
DOI :
10.1109/IIT.2002.1258097
