DocumentCode :
400955
Title :
Activation behavior of BF2+ implants in RTP annealed silicon
Author :
Chang, Kuo-Pin ; Robinson, Doug
fYear :
2002
fDate :
27-27 Sept. 2002
Firstpage :
686
Lastpage :
689
Abstract :
The sheet resistance (Rs) initially decreases with increasing BF2+ dose for implants exceeding the amorphization dose. This trend reverses after the implanted dose reaches a certain limit. Further dose increase results in a higher Rs and a deeper junction, without offering additional benefits. Fluorine gettered at implant-induced defect sites is responsible for this undesired behavior. Experimental results show that gettered fluorine and boron-fluorine bonds, formed at heavily damaged crystal sites, reduce boron activation.
Keywords :
boron; electrical resistivity; elemental semiconductors; fluorine; getters; ion implantation; rapid thermal annealing; semiconductor doping; silicon; BF2+ implants; RTP annealed Si; Si:B; Si:BF2; activation behavior; amorphization dose; gettered; heavily damaged crystal sites; implant-induced defect sites; sheet resistance; BiCMOS integrated circuits; Boron; Furnaces; Implants; Instruments; Ion implantation; Rapid thermal annealing; Scalability; Silicon; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on
Conference_Location :
Taos, New Mexico, USA
Print_ISBN :
0-7803-7155-0
Type :
conf
DOI :
10.1109/IIT.2002.1258098
Filename :
1258098
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=400955
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