Title :
Atomistic calculation of electronic states in III-V nitride quantum dots
Author :
Saito, T. ; Arakawa, Y.
Author_Institution :
Center for Collaborative Res., Tokyo Univ., Japan
Abstract :
Atomistic calculations of the electronic states in In0.2Ga0.8N/GaN and GaN/AlN quantum dots (QDs) have been carried out using a polarization-potential-dependent sp3 tight-binding method. A valence-force-field method is used for the strain distribution, and a finite-difference method for the polarization-induced potential and field. We find that a strong built-in electric field is induced in the QDs due to the polarization. The field causes the quantum-confined Stark effect in the QDs; i.e., red-shifted transition energies and a spatial separation of electron and hole wave functions.
Keywords :
III-V semiconductors; VB calculations; aluminium compounds; finite difference methods; gallium compounds; indium compounds; quantum confined Stark effect; semiconductor quantum dots; tight-binding calculations; wide band gap semiconductors; GaN-AlN; III-V nitride quantum dots; In0.2Ga0.8N-GaN; atomistic calculation; electronic states; finite-difference method; polarization-potential-dependent sp3 tight-binding method; quantum-confined Stark effect; red-shifted transition energy; strain distribution; valence-force-field method; Atomic layer deposition; Bonding; Capacitive sensors; Charge carrier processes; Energy states; Gallium nitride; III-V semiconductor materials; Piezoelectric polarization; Quantum dots; US Department of Transportation;
Conference_Titel :
Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. NUSOD 2003. Proceedings of the IEEE/LEOS 3rd International Conference on
Print_ISBN :
0-7803-7992-6
DOI :
10.1109/NUSOD.2003.1259025
