Numerical simulations in the development process of ultrahigh- speed MQW electroabsorption modulators

Author

Miyazaki, Yasunori ; Tokizaki, Shin-Ya ; Omura, Etsuji ; Mitsui, Yasuo

Author_Institution

High Freq. & Opt. Semicon. Div., Mitsubishi Electr. Corp., Hyogo, Japan

fYear

2003

fDate

14-16 Oct. 2003

Firstpage

11

Lastpage

14

Abstract

Numerical simulations have been applied in developing 10 Gbps EAM-DFB-LDs and 40 Gbps EAMs based on InGaAs/InGaAsP MQW. Coverage of the numerical approaches includes transmission characteristics and dopant diffusion in EAM as well as the extinction ratio and chirp of the EAM.

Keywords

III-V semiconductors; chirp modulation; distributed feedback lasers; electro-optical modulation; electroabsorption; gallium arsenide; high-speed optical techniques; indium compounds; integrated optoelectronics; optical fibre communication; optical transmitters; quantum confined Stark effect; semiconductor doping; semiconductor lasers; semiconductor quantum wells; 10 Gbit/s; 40 Gbit/s; EAM chirp; EAM-DFB-LDs; InGaAs-InGaAsP; InGaAs/InGaAsP MQW; MQW electroabsorption modulators; dopant diffusion; electroabsorption modulator-distributed feedback-laser diodes; extinction ratio; transmission characteristics; Chirp; Extinction ratio; Numerical simulation; Optical distortion; Optical modulation; Optical receivers; Optical refraction; Optical transmitters; Optical variables control; Quantum well devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. NUSOD 2003. Proceedings of the IEEE/LEOS 3rd International Conference on

Print_ISBN

0-7803-7992-6

Type

conf

DOI

10.1109/NUSOD.2003.1259029

Filename

1259029