Vertical beam quality of 660 nm AlGaInP laser diodes with asymmetric cladding layer

Author

Yoshida, Yasuaki ; Nishiguchi, Harumi ; Sasaki, Motoko ; Abe, Sinji ; Ohno, Akihito ; Miyashita, Makoto ; Ono, Ken-ichi ; Yagi, Tetsuya ; Omura, Etuji

Author_Institution

High Frequency & Opt. Semicond. Div., Mitsubishi Electr. Corp., Hyogo, Japan

fYear

2003

fDate

14-16 Oct. 2003

Firstpage

39

Lastpage

40

Abstract

Numerical analysis on the influence of the structural asymmetry on the vertical beam quality and optimization of laser characteristics are studied in the paper. Deflection of the vertical beam toward the GaAs substrate is caused by the disagreement of the steady-state optical field between the active region and the window region. The calculated angle of deflection is approximately 1.5 °, which agrees with the measurement.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser beams; semiconductor device models; semiconductor lasers; 660 pm; AlGaInP; AlGaInP laser diodes; GaAs; active region; asymmetric cladding layer; deflection angle; laser characteristics optimization; steady-state optical field; vertical beam; window region; Diode lasers; Laser beams; Optical propagation; Optical refraction; Optical variables control; Optical waveguides; Power generation; Quantum well lasers; Steady-state; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. NUSOD 2003. Proceedings of the IEEE/LEOS 3rd International Conference on

Print_ISBN

0-7803-7992-6

Type

conf

DOI

10.1109/NUSOD.2003.1259040

Filename

1259040