DocumentCode :
40156
Title :
Crystallographic Effects on Energy Dissipation in High- 
Silicon Bulk-Mode Resonators
Author :
Cheng Tu ; Lee, J.E.-Y.
Author_Institution :
Dept. of Electron. Eng., City Univ. of Hong Kong, Kowloon, China
Volume :
22
Issue :
2
fYear :
2013
fDate :
Apr-13
Firstpage :
262
Lastpage :
264
Abstract :
This letter reports measured results of quality factor (Q ) for single-crystal silicon square-plate resonators in relation to their crystal orientation within the (100) plane. Results from both the Lamé and extensional modes oriented in the 〈110〉 and 〈100〉 axes are presented. Q appears to be dependent on orientation for the Lamé mode. In the extensional mode, there is no significant difference in Q between the two axes due to the dominance of anchor loss. These trends agree well with the brief theoretical analysis that we have described here to provide a quantitative basis for interpreting the trends between Q and orientation observed in our measurements.
Keywords :
Q-factor; crystal orientation; crystallography; elemental semiconductors; micromechanical resonators; silicon; Lamé modes; Si; crystal orientation; crystallographic effects; energy dissipation; extensional modes; high-Q silicon bulk-mode resonators; microelectromechanical system resonator; quality factor; single-crystal silicon square-plate resonators; Acoustics; Crystals; Micromechanical devices; Optical resonators; Q factor; Q measurement; Silicon; Akhiezer loss; anchor loss; elastic anisotropy; microelectromechanical systems (MEMS) resonator; quality factor;
fLanguage :
English
Journal_Title :
Microelectromechanical Systems, Journal of
Publisher :
ieee
ISSN :
1057-7157
Type :
jour
DOI :
10.1109/JMEMS.2013.2239259
Filename :
6428585
Link To Document :
