Chip package co-design of a heterogeneously integrated 2.45 GHz CMOS VCO using embedded passives in a silicon package

Author

Nayak, Ghanshyam ; Mukund, P.R.

Author_Institution

Dept. of Electr. Eng., Rochester Inst. of Technol., NY, USA

fYear

2004

fDate

2004

Firstpage

627

Lastpage

630

Abstract

Phase Noise Performance of a Voltage Controlled Oscillator that determines spectral purity is dependent on the Quality Factor (Q) of the tank in LC Oscillators. On-chip inductors that are used to realize the LC tank have comparatively low quality factors and consume considerable die area. Here a Chip-Package Co-Design for a 2.45 GHz VCO is described using a high Q (∼30) inductor embedded in a silicon substrate. The heterogeneously integrated circuit has a phase noise of -110 dBc/Hz at a 100 kHz offset with power dissipation of 28 mW from a 2.5 V supply and has a tuning range of 6%. The resulting improvement in inductor coil quality factor, phase noise and area savings compared to a fully integrated VCO design is demonstrated.

Keywords

CMOS integrated circuits; Q-factor; inductors; integrated circuit design; integrated circuit packaging; phase noise; silicon; voltage-controlled oscillators; 100 kHz; 2.45 GHz; 2.5 V; 28 mW; CMOS integrated circuits; LC oscillators; Si; chip package codesign; complementary metal oxide semiconductor; inductor coil quality factor; integrated VCO design; integrated circuits; phase noise; power dissipation; silicon package; silicon substrate; voltage controlled oscillator; Circuit optimization; Coils; Inductors; Integrated circuit noise; Packaging; Phase noise; Power dissipation; Q factor; Silicon; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Design, 2004. Proceedings. 17th International Conference on

Print_ISBN

0-7695-2072-3

Type

conf

DOI

10.1109/ICVD.2004.1260989

Filename

1260989