DocumentCode :
402235
Title :
An original SiGe active differential output power splitter for millimetre-wave applications
Author :
Viallon, Christophe ; Tournier, E. ; Graffeuil, J. ; Parra, Thieny
Author_Institution :
LAAS, CNRS, Toulouse, France
Volume :
1
fYear :
2003
fDate :
7-9 Oct. 2003
Firstpage :
1
Abstract :
This paper deals with an original design of an active power splitter featuring a differential output presenting a greatly enhanced even mode rejection. The proposed circuit consists in two cascaded common emitter and common collector differential pairs. For achieving the best performance, it is shown that each of these two differential pairs requires a specific common node to ground impedance that is discussed. The circuit has been implemented on a 0.25μm SiGe BiCMOS process and exhibits anticipated phase and amplitude broadband unbalance less than 6.5° and 0.6 dB respectively all over the 6-27 GHz frequency range. At 20 GHz, a common mode rejection ratio better than 43 dB is predicted, i.e. a maximum 0.12 dB /0.35° output signal unbalance.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; MMIC power amplifiers; baluns; differential amplifiers; wideband amplifiers; 6 to 27 GHz; BiCMOS process; SiGe; active baluns; active differential output power splitter; amplitude broadband unbalance; cascaded differential pairs; common collector differential pairs; common emitter differential pairs; common mode rejection ratio; differential amplifier; enhanced even mode rejection; ground impedance; millimetre-wave applications; phase broadband unbalance; BiCMOS integrated circuits; Costs; Differential amplifiers; Frequency; Germanium silicon alloys; Impedance matching; Microwave circuits; Power generation; Silicon germanium; Silicon on insulator technology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 2003. 33rd European
Print_ISBN :
1-58053-834-7
Type :
conf
DOI :
10.1109/EUMC.2003.1262203
Filename :
1262203
Link To Document :
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