An integrated SiGe dual-band low noise amplifier for Bluetooth, HiperLAN and wireless LAN applications

Author

Shouxian, Mou ; Jianguo, Ma ; Seng, Yeo Kiat ; Anh, Do Manh

Author_Institution

Centre for Integrated Circuits & Syst., Nanyang Technol. Univ., Singapore

Volume

1

fYear

2003

fDate

7-9 Oct. 2003

Firstpage

5

Abstract

A bandpass low noise amplifier (LNA), which can simultaneously operate at two different frequency bands - 2.35GHz-2.6GHz and 5GHz-6GHz, is presented in this paper. The proposed dual-band LNA can be used for the Bluetooth, HiperLAN and Wireless LAN (IEEE 802.11a) communication applications, and is designed based on IBM 0.25μm SiGe BiCMOS technology, which has better performance comparing with silicon technology, while lower cost and better integration feasibility comparing with GaAs technology.

Keywords

BiCMOS analogue integrated circuits; Bluetooth; Ge-Si alloys; MMIC amplifiers; UHF amplifiers; UHF integrated circuits; equivalent circuits; impedance matching; transceivers; wireless LAN; 2.35 to 2.6 GHz; 5 to 6 GHz; BiCMOS technology; Bluetooth applications; HiperLAN applications; SiGe; bandpass low noise amplifier; equivalent circuit; high integration feasibility; impedance matching; integrated dual-band low noise amplifier; wireless LAN; BiCMOS integrated circuits; Bluetooth; Costs; Dual band; Frequency; Gallium arsenide; Germanium silicon alloys; Low-noise amplifiers; Silicon germanium; Wireless LAN;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2003. 33rd European

Print_ISBN

1-58053-834-7

Type

conf

DOI

10.1109/EUMC.2003.1262204

Filename

1262204