Title :
Ka-band coplanar low-noise amplifier design with power PHEMTs
Author :
Long, Sabine ; Escotte, Laurent ; Graffeuil, Jacques ; Fellon, Philippe ; Roques, Daniel
Author_Institution :
LAAS CNRS, Univ. Paul Sabatier, Toulouse, France
Abstract :
The design of a coplanar lownoise amplifier (LNA) is presented in this paper. Pseudomorphic high electron mobility transistors (PHEMTs), optimized for power applications, are used in order to evaluate the potentiality of this technology for mixed-mode applications. The three stages amplifier noise figure is lower than 2.6 dB on the 27-31 GHz frequency band with a 20 dB power gain.
Keywords :
HEMT integrated circuits; MMIC power amplifiers; field effect MMIC; field effect analogue integrated circuits; flip-chip devices; integrated circuit noise; power HEMT; 20 dB; 27 to 31 GHz; Ka-band coplanar low-noise amplifier design; MMIC amplifier; amplifier noise figure; flip-chip assembly; mixed-mode applications; power PHEMT; three stages amplifier; Circuit noise; Costs; Frequency; Heterojunctions; Low-noise amplifiers; Noise figure; Noise reduction; PHEMTs; Semiconductor device noise; Thermal resistance;
Conference_Titel :
Microwave Conference, 2003. 33rd European
Print_ISBN :
1-58053-834-7
DOI :
10.1109/EUMC.2003.1262207
