Title :
Finite Ground Coplanar lines on CMOS grade silicon with a thick embedded silicon oxide layer using micromachining techniques
Author :
Guoan Wang ; Abdolvand, Reza ; Ayazi, Farrokh ; Papapolymerou, John ; Tentzeris, Emmanouil
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
Finite Ground Coplanar (FGC) waveguide transmission lines on CMOS grade silicon wafer (ρ<0.01 ohm-cm) with a thick embedded silicon oxide layer have been developed using micromachining techniques. Lines with different lengths were designed, fabricated and measured. Measured attenuation and s-parameters are presented in the paper. Results show that the attenuation loss of the fabricated FGC lines is as low as 3.2 dB/cm at 40 GHz.
Keywords :
CMOS integrated circuits; S-parameters; coplanar waveguides; field effect MIMIC; field effect MMIC; micromachining; silicon; 40 GHz; CMOS grade silicon; S-parameters; Si; attenuation loss; attenuation parameters; different length lines; finite ground coplanar waveguide lines; micromachining; thick embedded silicon oxide layer; Attenuation; Circuits; Conductivity; Coplanar waveguides; Costs; Dielectric substrates; Electromagnetic waveguides; Micromachining; Polyimides; Silicon;
Conference_Titel :
Microwave Conference, 2003. 33rd European
Print_ISBN :
1-58053-834-7
DOI :
10.1109/EUMC.2003.1262209
