Finite Ground Coplanar lines on CMOS grade silicon with a thick embedded silicon oxide layer using micromachining techniques

Author

Guoan Wang ; Abdolvand, Reza ; Ayazi, Farrokh ; Papapolymerou, John ; Tentzeris, Emmanouil

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA

Volume

1

fYear

2003

fDate

7-9 Oct. 2003

Firstpage

25

Abstract

Finite Ground Coplanar (FGC) waveguide transmission lines on CMOS grade silicon wafer (ρ<0.01 ohm-cm) with a thick embedded silicon oxide layer have been developed using micromachining techniques. Lines with different lengths were designed, fabricated and measured. Measured attenuation and s-parameters are presented in the paper. Results show that the attenuation loss of the fabricated FGC lines is as low as 3.2 dB/cm at 40 GHz.

Keywords

CMOS integrated circuits; S-parameters; coplanar waveguides; field effect MIMIC; field effect MMIC; micromachining; silicon; 40 GHz; CMOS grade silicon; S-parameters; Si; attenuation loss; attenuation parameters; different length lines; finite ground coplanar waveguide lines; micromachining; thick embedded silicon oxide layer; Attenuation; Circuits; Conductivity; Coplanar waveguides; Costs; Dielectric substrates; Electromagnetic waveguides; Micromachining; Polyimides; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2003. 33rd European

Print_ISBN

1-58053-834-7

Type

conf

DOI

10.1109/EUMC.2003.1262209

Filename

1262209