DocumentCode :
402246
Title :
Refined wide band modelling and design of CMOS-compatible spiral inductors with BCB dielectric layer
Author :
Tikhov, Yuri ; Shim, Dongha ; Nam, K.W. ; Song, Insang
Author_Institution :
Samsung Adv. Inst. of Technol., Suwon, South Korea
Volume :
1
fYear :
2003
fDate :
7-9 Oct. 2003
Firstpage :
57
Abstract :
This paper discloses a new measurement-based model of on-chip spiral inductor with BCB dielectric layer. The parameters of the refined equivalent circuit are extracted through an optimisation with respect to specially formulated objective functions. Accurate modelling of fabricated high-Q inductors validates the proposed approach over a wide band from 100 MHz to 20 GHz.
Keywords :
CMOS integrated circuits; Q-factor; equivalent circuits; polymer films; thin film inductors; 100 MHz to 20 GHz; BCB dielectric layer; CMOS-compatible spiral inductors; benzocyclobutene; high-Q inductors; on-chip spiral inductor; Dielectric measurements; Dielectric substrates; Equivalent circuits; Fabrication; Frequency; Inductors; Integrated circuit modeling; Silicon; Spirals; Wideband;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 2003. 33rd European
Print_ISBN :
1-58053-834-7
Type :
conf
DOI :
10.1109/EUMC.2003.1262217
Filename :
1262217
Link To Document :
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