Title :
A Sallen and Key active filter using SiGe BiCMOS technology
Author :
Temcamani, Farid ; Diab, Hilda ; Régis, Myrianne ; Gautier, Jean-Luc
Author_Institution :
ENSEA-ECIME, France
Abstract :
In this paper, a 1.3 GHz Sallen and Key band pass filter, based on a voltage amplifier and designed with an original topology, is presented. This filter realized with a SiGe BiCMOS technology, showed a good agreement between simulation and measurement. In particular, the amplifier gain and the filter selectivity can be tuned. Q factors of up to 60 were measured.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; MMIC amplifiers; UHF amplifiers; UHF filters; band-pass filters; biquadratic filters; circuit simulation; integrated circuit measurement; network topology; semiconductor materials; 1.3 GHz; Q factors; Sallen and Key active filter; Sallen-Key biquadratic RC topologies; SiGe; SiGe BiCMOS technology; amplifier gain; band pass filter; design topology; filter measurement; filter selectivity; simulation; voltage amplifier; Active filters; Band pass filters; BiCMOS integrated circuits; Germanium silicon alloys; Impedance; Microwave filters; Q factor; Silicon germanium; Topology; Voltage;
Conference_Titel :
Microwave Conference, 2003. 33rd European
Print_ISBN :
1-58053-834-7
DOI :
10.1109/EUMC.2003.1262258
