A chip-scale packaged amplifier MMIC using broadband hot-via transitions

Author

Bessemoulin, A. ; Gaessler, C. ; Marschall, P. ; Quentin, P.

Author_Institution

United Monolithic Semicond., Orsay, France

Volume

1

fYear

2003

fDate

7-9 Oct. 2003

Firstpage

289

Abstract

The performance of RF hot-via transitions for use in chip-scale package (CSP) MMICs are presented. This is illustrated with the realization of a low noise amplifier MMIC using optimized hot-vias. Based on our standard 0.25-μm GaAs low-noise PHEMT process, with BCB coating and backside metallization, this 2-stage low noise microstrip amplifier mounted with bumps on a carrier substrate achieved a linear gain of 15 dB over the 15- to 32 GHz frequency range. To the author´s knowledge, this is the first demonstration of chip-scale packaged active MMICs using hot-via transitions.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; S-parameters; chip scale packaging; field effect MMIC; gallium arsenide; integrated circuit interconnections; integrated circuit noise; 15 dB; 15 to 32 GHz; BCB coating; GaAs; PHEMT process; RF transitions; active MMIC; backside metallization; broadband hot-via transitions; chip-scale packaged amplifier MMIC; low noise amplifier; microstrip amplifier; Broadband amplifiers; Chip scale packaging; Coatings; Gallium arsenide; Low-noise amplifiers; MMICs; Metallization; PHEMTs; Radio frequency; Radiofrequency amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2003. 33rd European

Print_ISBN

1-58053-834-7

Type

conf

DOI

10.1109/EUMC.2003.1262276

Filename

1262276