DocumentCode
402304
Title
A 23 GHz active mixer with integrated diode linearizer in SiGe BiCMOS technology
Author
Bao, Mingquan ; Yinggang Li ; Cathelin, Andreia
Author_Institution
Ericsson Res., Ericsson AB, Molndal, Sweden
Volume
1
fYear
2003
fDate
7-9 Oct. 2003
Firstpage
391
Abstract
Active mixers operating at 23 GHz are designed and fabricated in SiGe technology. An integrated diode linearizer is used to improve the linearity of the mixer. Measurement and simulation show excellent agreement. Typically, 10 dB double-sideband noise figure, 10 dBm IIP3 and 2 dB conversion gain are measured, featuring low noise and high linearity in a same design.
Keywords
BiCMOS analogue integrated circuits; Ge-Si alloys; MMIC mixers; active networks; integrated circuit noise; 23 GHz; BiCMOS technology; SiGe; active mixer; double balanced Gilbert topology; double-sideband noise figure; high linearity; integrated diode linearizer; low noise; mixer linearity; monolithic mixers; performance optimization; BiCMOS integrated circuits; Circuit topology; Diodes; Germanium silicon alloys; Impedance; Linearity; Mixers; Noise figure; Radio frequency; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2003. 33rd European
Print_ISBN
1-58053-834-7
Type
conf
DOI
10.1109/EUMC.2003.1262301
Filename
1262301
Link To Document