DocumentCode
402336
Title
Ka-Band MEMS switches on CMOS grade silicon with a polyimide interface layer
Author
Ponchak, George E. ; Varaljay, Nicholas C. ; Papapolymerou, John
Author_Institution
NASA Glenn Res. Center, Cleveland, OH, USA
Volume
3
fYear
2003
fDate
7-9 Oct. 2003
Firstpage
971
Abstract
For the first time, RF MEMS switches on CMOS grade Si with a polyimide interface layer are fabricated and characterized. At Ka-Band (36.6 GHz), an insertion loss of 0.52 dB and an isolation of 20 dB is obtained.
Keywords
CMOS integrated circuits; elemental semiconductors; integrated circuit design; microswitches; polymer films; radiofrequency integrated circuits; silicon; 0.52 dB; 20 dB; 36.6 GHz; CMOS grade silicon; K-Band MEMS switches; RF MEMS switches; Si; insertion loss; polyimide interface layer; CMOS process; CMOS technology; Fabrication; Integrated circuit technology; Micromechanical devices; Microswitches; Polyimides; Radiofrequency microelectromechanical systems; Silicon; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2003. 33rd European
Print_ISBN
1-58053-834-7
Type
conf
DOI
10.1109/EUMC.2003.1262814
Filename
1262814
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