SiGe broadband amplifiers with up to 80 GHz bandwidth for optical applications at 43 Gbit/s and beyond

Author

Wohlgemuth, O. ; Paschke, P. ; Baeyens, Y.

Author_Institution

Opt. Networking Group, Lucent Technol., Nuremberg, Germany

Volume

3

fYear

2003

fDate

7-9 Oct. 2003

Firstpage

1087

Abstract

Two broadband amplifiers for 43 Gbit/s data transmission were realized in a SiGe-HBT technology with f_t=120 GHz and f_max=100 GHz: a differential lumped limiting amplifier with 36 dB differential gain and 26 GHz bandwidth and a two stage distributed amplifier with a gain-bandwidth product of 820 GHz. Additionally, for applications beyond 43 Gbit/s, a distributed amplifier was realized in a more advanced SiGe process (f_t, f_max > 200 GHz). This amplifier achieves 13 dB gain and more than 80 GHz bandwidth, which is the highest bandwidth reported so far for Si-based amplifiers.

Keywords

Ge-Si alloys; data communication equipment; distributed amplifiers; semiconductor materials; semiconductor optical amplifiers; wideband amplifiers; 100 GHz; 120 GHz; 26 GHz; 36 dB; 80 GHz; 820 GHz; Si based amplifiers; SiGe; SiGe HBT technology; SiGe broadband amplifiers; bandwidth; data transmission; differential gain; differential lumped limiting amplifier; distributed amplifier; optical applications; Bandwidth; Broadband amplifiers; Data communication; Differential amplifiers; Distributed amplifiers; Gain; Germanium silicon alloys; Optical amplifiers; Silicon germanium; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2003. 33rd European

Print_ISBN

1-58053-834-7

Type

conf

DOI

10.1109/EUMC.2003.1262843

Filename

1262843