Title :
Wideband cryogenic on-wafer measurements at 20-295 K and 50-110 GHz
Author :
Vähä-Heikkilä, Tauno ; Varis, Jussi ; Hakojarvi, Hannu ; Tuovinen, Jussi
Author_Institution :
MilliLab., VTT Inf. Technol., Finland
Abstract :
A measurement system has been developed for cryogenic on-wafer characterization at 50-110 GHz. The measurement system allows on-wafer S-parameter measurements of active and passive devices at this frequency range. The S-parameters of active devices can be measured as function of frequency, temperature, and bias conditions. As an example of cryogenic on-wafer measurements, measured S-parameters of InP HEMTs are presented at temperatures of 20, 80, 160, and 295 K and in the frequency range of 50-110 GHz.
Keywords :
III-V semiconductors; S-parameters; cryogenic electronics; high electron mobility transistors; indium compounds; 20 to 295 K; 50 to 110 GHz; HEMT; InP; S-parameter; active devices; indium compounds; passive devices; wideband cryogenic; Cryogenics; Frequency measurement; HEMTs; MODFETs; Microwave measurements; Millimeter wave measurements; Scattering parameters; Steel; Temperature; Wideband;
Conference_Titel :
Microwave Conference, 2003. 33rd European
Print_ISBN :
1-58053-834-7
DOI :
10.1109/EUMC.2003.1262863
