Monolithically integrated silicon-IMPATT oscillator at 93 GHz

Author

Schollhorn, Claus ; Morschbach, M. ; Oehme, M. ; Hasch, J. ; Irion, H. ; Kasper, E.

Author_Institution

Inst. fur Halbleitertech., Univ. Stuttgart, Germany

Volume

3

fYear

2003

fDate

7-9 Oct. 2003

Firstpage

1291

Abstract

In this paper monolithically integrated IMPATT diodes are presented. To prove the concept of completely monolithic integration, no special heatsinks or other constructions to optimize cooling were used. The diodes were grown with molecular beam epitaxy on a high resistivity silicon substrate. S-Parameter measurements were performed from 85 GHz up to 110 GHz, showing high negative impedances above the avalanche frequency. Oscillations at a frequency near 93 GHz were observed with the designed resonator circuit.

Keywords

IMPATT oscillators; S-parameters; electrical resistivity; elemental semiconductors; monolithic integrated circuits; semiconductor epitaxial layers; silicon; 85 to 110 GHz; 93 GHz; S-parameter; Si; avalanche frequency; cooling; molecular beam epitaxy; monolithically integrated silicon-IMPATT oscillator; negative impedances; resistivity; resonator circuit; Conductivity; Cooling; Diodes; Frequency; Heat sinks; Molecular beam epitaxial growth; Monolithic integrated circuits; Oscillators; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2003. 33rd European

Print_ISBN

1-58053-834-7

Type

conf

DOI

10.1109/EUMC.2003.1262894

Filename

1262894