• DocumentCode
    402398
  • Title

    Integrated terahertz transmit/receive modules

  • Author

    Porterfield, David ; Hesler, Jeffrey ; Crowe, T. ; Bishop, William ; Woolard, Dwight

  • Author_Institution
    Virginia Diodes Inc., Charlottesville, VA, USA
  • Volume
    3
  • fYear
    2003
  • fDate
    7-9 Oct. 2003
  • Firstpage
    1319
  • Abstract
    We report on research and development of millimeter-wave components used in prototype 600 GHz transmit and receive systems. These systems offer state-of-the-art performance in terms of noise, power, ease of use and mechanical and electrical robustness. The transmitters comprise high-power frequency multiplier chains driven by commercial power amplifiers in the 18-45 GHz range and lower frequency fundamental oscillators. The receivers comprise a subharmonic mixer and an LO multiplier chain. All of the components are based on planar GaAs Schottky diodes in fixed-tuned broadband embedding structures. These designs are scalable to any frequency in the band from 100 GHz through 1 THz and we are exploring the challenges of scaling to the 1-5 THz band.
  • Keywords
    III-V semiconductors; Schottky diodes; frequency multipliers; gallium arsenide; millimetre wave receivers; mixers (circuits); modules; transmitters; 100 GHz to 1 THz; 18 to 45 GHz; GaAs; electrical robustness; high-power frequency multiplier; integrated terahertz receive modules; integrated terahertz transmit modules; lower frequency fundamental oscillators; mechanical robustness; millimeter wave component; noise; planar GaAs Schottky diodes; power amplifiers; subharmonic mixer; Broadband amplifiers; Frequency; Gallium arsenide; High power amplifiers; Noise robustness; Oscillators; Prototypes; Research and development; Schottky diodes; Transmitters;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 2003. 33rd European
  • Print_ISBN
    1-58053-834-7
  • Type

    conf

  • DOI
    10.1109/EUMC.2003.1262901
  • Filename
    1262901