DocumentCode
402454
Title
Influence of RF signal power on tunable MEMS capacitors
Author
Cruau, A. ; Nicole, Pierre ; Lissorgues, Gaëlle ; Tassetti, C.-M.
Author_Institution
OHTA Dept., Thales Airborne Syst., Elancourt, France
Volume
2
fYear
2003
fDate
7-9 Oct. 2003
Firstpage
663
Abstract
Capacitive structures are sensitive to the electrostatic force created by the RF signal going through them. In the case of MEMS tunable capacitors, the consequences on performance and capacitance values are to be quantified. Two systems are studied: one-gap with RF signal and actuation voltage on same electrodes, and two-gaps with RF signal separated from actuation. Computational results show great influence of power on pull-in, even for low power levels, for both MEMS capacitor structures.
Keywords
capacitors; micromechanical devices; radiofrequency interference; MEMS tunable capacitors; RF signal power; actuation voltage; capacitive structures; electrostatic force; Capacitance; Capacitors; Electrodes; Electrostatics; Geometry; Micromechanical devices; Radio frequency; Switches; Tunable circuits and devices; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2003. 33rd European
Print_ISBN
1-58053-834-7
Type
conf
DOI
10.1109/EUMC.2003.1262977
Filename
1262977
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