Title :
0.13μm low voltage logic based RF CMOS technology with 115GHz fT and 80GHz fMAX
Author :
Guo, J.C. ; Huang, C.H. ; Chan, K.T. ; Lien, W.Y. ; Wu, C.M. ; Sun, Y.C.
Author_Institution :
Dept. of Electron. Eng., National Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
Superior RF CMOS of 115 fT and 80GHz fMAX has been realized by 0.13μm low voltage logic based RF CMOS technology by aggressive device scaling and optimized layout. NFmin of 2.2 dB at 10GHz is achieved even without deep N-well and ground-shielded signal pad. P1dB of near 10dBm can fit Bluetooth requirement and 55% PAE at 2.4GHz address the good potential of sub-100nm CMOS for low voltage RF power applications.
Keywords :
CMOS logic circuits; circuit optimisation; integrated circuit layout; radiofrequency integrated circuits; 0.13 microns; 115 GHz; 2.2 dB; 2.4 GHz; 80 GHz; Bluetooth; RF CMOS technology; RF power applications; deep N-well signal pad; device scaling; ground-shielded signal pad; low voltage logic; optimized layout; CMOS logic circuits; CMOS technology; Current measurement; Gain measurement; Low voltage; Noise measurement; Performance gain; Power measurement; Radio frequency; Wireless communication;
Conference_Titel :
Microwave Conference, 2003. 33rd European
Print_ISBN :
1-58053-834-7
DOI :
10.1109/EUMC.2003.1262982
